Watling, J.R., Yang, L., Borici, M., Wilkins, R.C.W., Asenov, A., Barker, J.R. and Roy, S. (2004) The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs. Solid-State Electronics, 48, pp. 1337-1346. (doi: 10.1016/j.sse.2004.01.015)
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Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Barker, Professor John and Asenov, Professor Asen and Watling, Dr Jeremy and Roy, Professor Scott |
Authors: | Watling, J.R., Yang, L., Borici, M., Wilkins, R.C.W., Asenov, A., Barker, J.R., and Roy, S. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Solid-State Electronics |
ISSN: | 0038-1101 |
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