Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs

Thirunavukkarasu, V. et al. (2017) Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs. Superlattices and Microstructures, 111, pp. 649-655. (doi: 10.1016/j.spmi.2017.07.020)

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The characteristic performance of n-type and p-type inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode, bulk Germanium FinFET device with 3-nm gate length (LG) are demonstrated by using 3-D quantum transport device simulation. The simulated bulk Ge FinFET device exhibits favorable short channel characteristics, including drain-induced barrier lowering (DIBL<10mV/V), sub threshold slope (SS∼64mV/dec.). Electron density distributions in ON-state and OFF-state also show that the simulated devices have large ION/IOFF ratios. Homogenous source/drain doping is maintained and only the channel doping is varied among different operating modes. Also, a constant threshold voltage |VTH|∼0.31V is maintained. Moreover, the calculated quantum capacitance (CQ) values of the Ge nanowire emphasizes the importance of quantum confinement effects (QCE) on the performance of the ultra-scaled devices.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Sadi, Dr Toufik and Lee, Jaehyun and Georgiev, Dr Vihar and THIRUNAVUKKARASU, VASANTHAN and Asenov, Professor Asen
Authors: Thirunavukkarasu, V., Lee, J., Sadi, T., Georgiev, V. P., Lema, F.-A., Soundarapandian, K. P., Jhan, Y.-R., Yang, S.-Y., Lin, Y.-R., Kurniawan, E. D., Wu, Y.-C., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Superlattices and Microstructures
ISSN (Online):1096-3677
Published Online:07 July 2017
Copyright Holders:Copyright © 2017 Elsevier Ltd.
First Published:First published in Superlattices and Microstructures 111: 649-655
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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