Long, A.R., Pioro-Ladriere, M., Davies, J.H. , Sachrajda, A.S., Gaudreau, L., Zawadzki, P., Lapointe, J., Gupta, J., Wasilewski, Z. and Studenikin, S.A. (2006) The origin of switching noise in GaAs/AlGaAs lateral gated devices. Physica E: Low-Dimensional Systems and Nanostructures, 34(1-2), pp. 553-556. (doi: 10.1016/j.physe.2006.03.118)
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Abstract
We have studied at low temperatures the switching (telegraph) noise in quantum point contacts fabricated on GaAs/AlGaAs heterostructures and introduce a model for its origin which explains why the noise can be suppressed by cooling the samples with a positive bias applied to the gates. This model depends on there being a small tunnel current of electrons from gate to channel and we have detected such a current at the level of View the MathML source using a quantum corral fabricated on similar material.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Long, Professor Andrew and Davies, Professor John |
| Authors: | Long, A.R., Pioro-Ladriere, M., Davies, J.H., Sachrajda, A.S., Gaudreau, L., Zawadzki, P., Lapointe, J., Gupta, J., Wasilewski, Z., and Studenikin, S.A. |
| College/School: | College of Science and Engineering > School of Physics and Astronomy College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Physica E: Low-Dimensional Systems and Nanostructures |
| Publisher: | Elsevier BV |
| ISSN: | 1386-9477 |
| ISSN (Online): | 1873-1759 |
| Published Online: | 27 April 2006 |
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