The origin of switching noise in GaAs/AlGaAs lateral gated devices

Long, A.R., Pioro-Ladriere, M., Davies, J.H. , Sachrajda, A.S., Gaudreau, L., Zawadzki, P., Lapointe, J., Gupta, J., Wasilewski, Z. and Studenikin, S.A. (2006) The origin of switching noise in GaAs/AlGaAs lateral gated devices. Physica E: Low-Dimensional Systems and Nanostructures, 34(1-2), pp. 553-556. (doi:10.1016/j.physe.2006.03.118)

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Abstract

We have studied at low temperatures the switching (telegraph) noise in quantum point contacts fabricated on GaAs/AlGaAs heterostructures and introduce a model for its origin which explains why the noise can be suppressed by cooling the samples with a positive bias applied to the gates. This model depends on there being a small tunnel current of electrons from gate to channel and we have detected such a current at the level of View the MathML source using a quantum corral fabricated on similar material.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Long, Professor Andrew and Davies, Professor John
Authors: Long, A.R., Pioro-Ladriere, M., Davies, J.H., Sachrajda, A.S., Gaudreau, L., Zawadzki, P., Lapointe, J., Gupta, J., Wasilewski, Z., and Studenikin, S.A.
College/School:College of Science and Engineering > School of Physics and Astronomy
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Physica E: Low-Dimensional Systems and Nanostructures
Publisher:Elsevier BV
ISSN:1386-9477
ISSN (Online):1873-1759
Published Online:27 April 2006

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