Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt and Ni based gate stacks

Floros, K., Li, X. , Guiney, I., Cho, S.-J., Hemakumara, D., Wallis, D. J., Wasige, E. , Moran, D. A.J. , Humphreys, C. J. and Thayne, I. G. (2017) Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt and Ni based gate stacks. Physica Status Solidi A: Applications and Materials Science, 214(8), 1600835. (doi:10.1002/pssa.201600835)

Floros, K., Li, X. , Guiney, I., Cho, S.-J., Hemakumara, D., Wallis, D. J., Wasige, E. , Moran, D. A.J. , Humphreys, C. J. and Thayne, I. G. (2017) Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt and Ni based gate stacks. Physica Status Solidi A: Applications and Materials Science, 214(8), 1600835. (doi:10.1002/pssa.201600835)

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Abstract

In this work, we report the performance of 3 μm gate length "dual barrier„ InAlN/AlGaN/GaN HEMTs on Si substrates with gate-drain contact separations in the range 4-26 μm. Devices with Pt and Ni based gates were studied and their leakage characteristics are compared. Maximum drain current IDS of 1 A/mm, maximum extrinsic transconductance gm ~203 mS/mm and on-resistance Ron 4.07 Ω mm for gate to drain distance LGD = 4 μm were achieved. Nearly ideal sub-threshold swing of 65.6 mV/dec was obtained for LGD = 14 μm. The use of Pt based gate metal stacks led to a two to three orders of magnitude gate leakage current decrease compared to Ni based gates. The influence of InAlN layer thickness on the transistor transfer characteristics is also discussed.

Item Type:Articles
Keywords:HEMT, GaN, InAlN, AlGaN, silicon.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Li, Dr Xu and Cho, Dr Sungjin and Thayne, Professor Iain and HEMAKUMARA, Dilini and Moran, Dr David and Floros, Mr Konstantinos
Authors: Floros, K., Li, X., Guiney, I., Cho, S.-J., Hemakumara, D., Wallis, D. J., Wasige, E., Moran, D. A.J., Humphreys, C. J., and Thayne, I. G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:GaN Power Electronics
Journal Name:Physica Status Solidi A: Applications and Materials Science
Publisher:Wiley
ISSN:1862-6300
ISSN (Online):1862-6319
Published Online:20 July 2017
Copyright Holders:Copyright © 2017 Wiley-VCH Verlag GmbH & Co.
First Published:First published in Physica Status Solidi A: Applications and Materials Science 214(8): 1600835
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
600761Silicon Compatible GaN Power ElectronicsIain ThayneEngineering and Physical Sciences Research Council (EPSRC)EP/K014471/1ENG - ENGINEERING ELECTRONICS & NANO ENG