Cheng, B., Roy, S., Roy, G., Adamu-Lema, F. and Asenov, A. (2005) Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells. Solid-State Electronics, 49(5), pp. 740-746. (doi: 10.1016/j.sse.2004.09.005)
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Abstract
An ‘atomistic’ circuit simulation methodology is developed to investigate intrinsic parameter fluctuations introduced by discreteness of charge and matter in decananometer scale MOSFET circuits. Based on the ‘real’ doping profile, the impact of random device doping on 6-T SRAM static noise margins are discussed in detail for 35 nm physical gate length devices. We conclude that SRAM may not gain all the benefits of future bulk CMOS scaling, and new device architectures are needed to scale SRAM down to future technology node.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Roy, Dr Gareth and Cheng, Dr Binjie and Roy, Professor Scott and Asenov, Professor Asen and Adamu-Lema, Dr Fikru |
Authors: | Cheng, B., Roy, S., Roy, G., Adamu-Lema, F., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Physics and Astronomy |
Journal Name: | Solid-State Electronics |
Publisher: | Elsevier Ltd. |
ISSN: | 0038-1101 |
ISSN (Online): | 1879-2405 |
Published Online: | 23 February 2005 |
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