Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells

Cheng, B., Roy, S., Roy, G., Adamu-Lema, F. and Asenov, A. (2005) Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells. Solid-State Electronics, 49(5), pp. 740-746. (doi:10.1016/j.sse.2004.09.005)

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Abstract

An ‘atomistic’ circuit simulation methodology is developed to investigate intrinsic parameter fluctuations introduced by discreteness of charge and matter in decananometer scale MOSFET circuits. Based on the ‘real’ doping profile, the impact of random device doping on 6-T SRAM static noise margins are discussed in detail for 35 nm physical gate length devices. We conclude that SRAM may not gain all the benefits of future bulk CMOS scaling, and new device architectures are needed to scale SRAM down to future technology node.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Roy, Dr Gareth and Cheng, Dr Binjie and Roy, Professor Scott and Asenov, Professor Asen and Adamu-Lema, Dr Fikru
Authors: Cheng, B., Roy, S., Roy, G., Adamu-Lema, F., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Journal Name:Solid-State Electronics
Publisher:Elsevier Ltd.
ISSN:0038-1101
ISSN (Online):1879-2405
Published Online:23 February 2005

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