Broad-area InAs/GaAs quantum dot lasers incorporating intermixed passive waveguide

Gordeev, N.Y., Tan, W.K., Bryce, A.C., Novikov, I.I., Kryzhanovskaya, N.V., Kuznetsov, S.M., Gladyshev, A.G., Maximov, M.V., Mikhrin, S.S. and Marsh, J.H. (2007) Broad-area InAs/GaAs quantum dot lasers incorporating intermixed passive waveguide. Electronics Letters, 43(1), pp. 29-30. (doi: 10.1049/el:20072665)

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Publisher's URL: http://dx.doi.org/10.1049/el:20072665

Abstract

InAs/GaAs quantum dot lasers incorporating passive waveguide created by post-growth intermixing processing have been studied. Emission wavelength of the passive section shows relative blueshift as high as 135 nm with respect to the emission wavelength of the active section. Intrinsic losses in the section formed by the intermixing are very small. Broad-area lasers with 100 µm stripe width incorporating intermixed section have demonstrated improvements in far-field pattern under both pulsed and continuous wave pumping current.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and Bryce, Prof Ann
Authors: Gordeev, N.Y., Tan, W.K., Bryce, A.C., Novikov, I.I., Kryzhanovskaya, N.V., Kuznetsov, S.M., Gladyshev, A.G., Maximov, M.V., Mikhrin, S.S., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Electronics Letters
Publisher:The Institution of Engineering and Technology
ISSN:0013-5194
ISSN (Online):1350-911X

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
353571Optoelectronic device integration technologies for the 21st CenturyAnn BryceEngineering & Physical Sciences Research Council (EPSRC)GR/S79787/01Electronic and Nanoscale Engineering