A theoretical model for predicting Schottky-barrier height of the nanostructured silicide-silicon junction

Lee, J., Kim, S. and Shin, M. (2017) A theoretical model for predicting Schottky-barrier height of the nanostructured silicide-silicon junction. Applied Physics Letters, 110(23), 233110. (doi: 10.1063/1.4985013)

Abstract

ABSTRACT In this work, we have performed the first-principles calculations to investigate the Schottky barrier height (SBH) of various nanostructured silicide-silicon junctions. As for the silicides, PtSi, NiSi, TiSi2, and YSi2 have been used. We find that EFiF = EFi – EF, where EFi and EF are the intrinsic Fermi level of the semiconductor part and the Fermi level of the junction, respectively, is unchanged by nanostructuring. From this finding, we suggest a model, a symmetric increase of the SBH (SI) model, to properly predict SBHs of nanostructured silicide-silicon junctions. We also suggest two measurable quantities for the experimental validation of our model. The effect of our SI model applied to nanostructures such as nanowires and ultra-thin-bodies is compared with that of the widely used previous SBH model.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Lee, Mr Jaehyun
• Authors: Lee, J., Kim, S., and Shin, M.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Applied Physics Letters
• Publisher: AIP Publishing
• ISSN: 0003-6951
• ISSN (Online): 1077-3118
• Published Online: 07 June 2017
• Copyright Holders: Copyright © 2017 AIP Publishing
• First Published: First published in Applied Physics Letters 110(23):233110
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher