Roy, G., Brown, A. R., Asenov, A. and Roy, S. (2003) Bipolar quantum corrections in resolving individual dopants in 'atomistic' device simulation. Superlattices and Microstructures, 34(3-6), pp. 327-334. (doi: 10.1016/j.spmi.2004.03.066)
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Abstract
In ‘atomistic’ device simulation the resolving of discrete charges onto a fine-grained simulation mesh can lead to problems. The sharply resolved Coloumb potential can cause simulation artefacts to appear in classical simulation environments using Boltzmann or Fermi–Dirac statistics. Various methods have been proposed in an effort to reduce or eliminate such artefacts as the localisation of mobile carriers by sharply resolved Coulomb wells, however they have met with limited success. In this paper we present an alternative approach for handling discrete charges in drift diffusion ‘atomistic’ simulations by properly introducing the related quantum mechanical effects using the density gradient formalism for both electrons and holes. This eliminates the trapping of mobile charge in heavily doped regions of the device and the related artefacts in the simulated device characteristics.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Roy, Dr Gareth and Brown, Mr Andrew and Roy, Professor Scott and Asenov, Professor Asen |
Authors: | Roy, G., Brown, A. R., Asenov, A., and Roy, S. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Physics and Astronomy |
Journal Name: | Superlattices and Microstructures |
Publisher: | Elsevier Ltd. |
ISSN: | 0749-6036 |
ISSN (Online): | 1096-3677 |
Published Online: | 12 May 2004 |
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