Dry etching of a device quality high-k GaxGdyOz gate oxide in CH4/H2–O2 chemistry for the fabrication of III–V MOSFETs

Li, X. , Zhou, H., Hill, R.J.W., Wilkinson, C.D.W. and Thayne, I.G. (2007) Dry etching of a device quality high-k GaxGdyOz gate oxide in CH4/H2–O2 chemistry for the fabrication of III–V MOSFETs. Microelectronic Engineering, 84(5-8), pp. 1124-1127. (doi:10.1016/j.mee.2007.01.045)

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Abstract

This paper investigates the reactive ion etching of GaxGdyOz, a device quality high-k gate oxide for the fabrication of III–V metal-oxide-semiconductor field-effect-transistors (MOSFETs) based on high mobility channel device layer structures. The etching of GaxGdyOz (GGO) was performed in an SRS System ET340 with a CH4/H2/O2 based chemistry The GGO high-k gate stacks for GaAs MOSFETs were grown by molecular beam epitaxy in a dual-chamber system. Etching profile was characterised by SEM using a wet chemical HCl/HF/H2O decoration etch to assist layer identification. The effects of etching gas, RF power, and duration of CH4/H2 and O2 gas cycles on etch process were investigated.

Item Type:Articles
Additional Information:Proceedings of the 32nd International Conference on Micro- and Nano-Engineering, Barcelona, Spain, 17-20 Sept 2006.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Zhou, Dr Haiping and Thayne, Professor Iain and Hill, Mr Richard and Wilkinson, Professor Christopher
Authors: Li, X., Zhou, H., Hill, R.J.W., Wilkinson, C.D.W., and Thayne, I.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microelectronic Engineering
Publisher:Elsevier
ISSN:0167-9317
ISSN (Online):1873-5568
Published Online:27 January 2007

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