Effect of resist sensitivity ratio on T-gate fabrication

Chen, Y., Macintyre, D.S. and Thoms, S. (2001) Effect of resist sensitivity ratio on T-gate fabrication. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19(6), pp. 2494-2498. (doi:10.1116/1.1420577)

Full text not currently available from Enlighten.

Publisher's URL: http://dx.doi.org/10.1116/1.1420577

Abstract

The need for short length T gates with good process control is demanding because pattern resolution is required in the lower level of resist. This article considers different resist systems and uses the resist sensitivity ratio between the head and foot defining layers to build two models. These are useful for determining the optimum parameters for T-gate fabrication and associated gate feeds. We show that the optimum resist sensitivity ratio is about 6 at 50 kV where bloating is negligible and good footwidth control is obtained. We also show that further improvements can be obtained by moving to 100 kV where a sensitivity ratio of 14 can be used. Sensitivity ratios between 6 and 14 can be achieved using either the poly(methylmethacrylate)/UVIII or ZEP520/UVIII bilayers since in both cases the sensitivity ratio can be varied by changing the development times and the bake temperatures.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thoms, Dr Stephen and Macintyre, Dr Douglas
Authors: Chen, Y., Macintyre, D.S., and Thoms, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN:1071-1023

University Staff: Request a correction | Enlighten Editors: Update this record