Monolithically-integrated TE-mode 1D silicon-on-insulator isolators using seedlayer-free garnet

Zhang, C., Dulal, P., Stadler, B. J.H. and Hutchings, D. C. (2017) Monolithically-integrated TE-mode 1D silicon-on-insulator isolators using seedlayer-free garnet. Scientific Reports, 7, 5820. (doi: 10.1038/s41598-017-06043-z) (PMID:28725052) (PMCID:PMC5517653)

142017.pdf - Published Version
Available under License Creative Commons Attribution.



The first experimental TE-mode silicon-on-insulator (SOI) isolators using Faraday Rotation are here realized to fill the ‘missing link’ in source-integrated near infrared photonic circuits. The isolators are simple 1D 2-element waveguides, where garnet claddings and longitudinal magnetic fields produce nonreciprocal mode conversion, the waveguide equivalent of Faraday Rotation (FR). Quasi-phase matched claddings are used to overcome the limitations of birefringence. Current experimental SOI isolators use nonreciprocal phase shift (NRPS) in interferometers or ring resonators, but to date NRPS requires TM-modes, so the TE-modes normally produced by integrated lasers cannot be isolated without many ancillary polarisation controls. The presented FR isolators are made via lithography and sputter deposition, which allows facile upscaling compared to the pulsed laser deposition or wafer bonding used in the fabrication of NRPS devices. Here, isolation ratios and losses of 11 dB and 4 dB were obtained, and future designs are identified capable of isolation ratios >30 dB with losses <6 dB.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Hutchings, Professor David and Zhang, Miss Cui
Authors: Zhang, C., Dulal, P., Stadler, B. J.H., and Hutchings, D. C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Scientific Reports
Publisher:Nature Publishing Group
ISSN (Online):2045-2322
Copyright Holders:Copyright © 2017 The Authors
First Published:First published in Scientific Reports 7: 5820
Publisher Policy:Reproduced under a Creative Commons license
Data DOI:10.5525/gla.researchdata.397

University Staff: Request a correction | Enlighten Editors: Update this record

Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
594681Materials World Network: Complex oxides for heterogeneous optoelectronic integrationDavid HutchingsEngineering and Physical Sciences Research Council (EPSRC)EP/J018708/1ENG - ENGINEERING ELECTRONICS & NANO ENG