Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE

Feng, W., Wang, W., Zhu, H., Zhao, L., Hou, L. and Pan, J. (2005) Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE. Semiconductor Science and Technology, 20(10), pp. 1083-1086. (doi: 10.1088/0268-1242/20/10/017)

Abstract

Narrow stripe selective MOVPE has been used to grow high quality oxide-free InGaAlAs layers on an InP substrate patterned with SiO2 masks at optimized growth conditions. Mirror-like surface morphologies and abrupt cross sections are obtained in all samples without spike growth at the mask edge. For the narrow stripe selectively grown InGaAlAs layers with a mesa width of about 1.2 µm, a bandgap wavelength shift of 70 nm, a photoluminescence (PL) intensity of more than 80% and a PL full width at half maximum (FWHM) of less than 60 meV are obtained simultaneously with a small mask width variation from 0 to 40 µm. The characteristics of the thickness enhancement ratio and the PL spectrum dependence on the mask width are presented and explained by considering both the migration effect from a masked region and the lateral vapour diffusion effect.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Hou, Dr Lianping
• Authors: Feng, W., Wang, W., Zhu, H., Zhao, L., Hou, L., and Pan, J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Semiconductor Science and Technology
• Publisher: IOP Publishing
• ISSN: 0268-1242
• ISSN (Online): 1361-6641
• Published Online: 14 September 2005