Thayne, I. , Li, X. , Millar, D., Fu, Y.-C. and Peralagu, U. (2017) Plasma Processing of III-V Materials for Energy Efficient Electronics Applications. In: Advanced Etch Technology for Nanopatterning VI, San Jose, CA, USA, 27 Feb - 01 Mar 2017, 101490R. (doi: 10.1117/12.2257863)
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Abstract
This paper reviews some recent activity at the James Watt Nanofabrication Centre in the University of Glasgow in the area of plasma processing for energy efficient compound semiconductor-based transistors. Atomic layer etching suitable for controllable recess etching in GaN power transistors will be discussed. In addition, plasma based surface passivation techniques will be reviewed for a variety of compound semiconductor materials ((100) and (110) oriented InGaAs and InGaSb).
Item Type: | Conference Proceedings |
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Additional Information: | SPIE Advanced Lithography Conference |
Keywords: | Compound semiconductors, atomic layer etching, plasma-based surface passivation. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Fu, Mr Yen-Chun and Peralagu, Mr Uthayasankaran and Li, Dr Xu |
Authors: | Thayne, I., Li, X., Millar, D., Fu, Y.-C., and Peralagu, U. |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Engineering > James Watt Nanofabrication Centre |
Research Group: | Micro- and Nanotechnology |
ISSN: | 0277-786X |
Published Online: | 21 March 2017 |
Copyright Holders: | Copyright © 2017 SPIE |
First Published: | First published in Proceedings of SPIE 10149: 10149R |
Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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