Millar, D., Peralagu, U. , Li, X. , Fu, Y.-C., Gaspar, G., Hurley, P. and Thayne, I. (2017) Improving the electrical properties of the In0.3Ga0.7Sb-Al2O3 interface via in-situ H2 plasma and TMA exposure. 20th Conference on Insulating Films on Semiconductors (INFOS 2017), Potsdam, Germany, 27-30 Jun 2017.
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Abstract
In this work, a systematic study investigating the impact of in-situ H2 plasma exposure, at varying exposure powers and times, on the electrical properties of the interface between p/n-type In0.3Ga0.7Sb-Al;O3 is reported. It is found that the optimal process comprising H;2; plasma exposure and a forming gas anneal (FGA) is applicable to both p and n-type InGaSb gate stacks, with genuine surface inversion demonstrated for both. The Dit profile is extracted across the band gap with a value of 1.9 x 1012eV-1cm-2 obtained at mid gap.
Item Type: | Conference or Workshop Item |
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Keywords: | InGaSb, FGA, MOS capacitor. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Fu, Mr Yen-Chun and Li, Dr Xu and Thayne, Prof Iain and Millar, Mr David and Peralagu, Mr Uthayasankaran |
Authors: | Millar, D., Peralagu, U., Li, X., Fu, Y.-C., Gaspar, G., Hurley, P., and Thayne, I. |
Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Micro- and Nanotechnology |
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