Improving the electrical properties of the In0.3Ga0.7Sb-Al2O3 interface via in-situ H2 plasma and TMA exposure

Millar, D., Peralagu, U. , Li, X. , Fu, Y.-C., Gaspar, G., Hurley, P. and Thayne, I. (2017) Improving the electrical properties of the In0.3Ga0.7Sb-Al2O3 interface via in-situ H2 plasma and TMA exposure. 20th Conference on Insulating Films on Semiconductors (INFOS 2017), Potsdam, Germany, 27-30 Jun 2017.

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Abstract

In this work, a systematic study investigating the impact of in-situ H2 plasma exposure, at varying exposure powers and times, on the electrical properties of the interface between p/n-type In0.3Ga0.7Sb-Al;O3 is reported. It is found that the optimal process comprising H;2; plasma exposure and a forming gas anneal (FGA) is applicable to both p and n-type InGaSb gate stacks, with genuine surface inversion demonstrated for both. The Dit profile is extracted across the band gap with a value of 1.9 x 1012eV-1cm-2 obtained at mid gap.

Item Type:Conference or Workshop Item
Keywords:InGaSb, FGA, MOS capacitor.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Fu, Mr Yen-Chun and Li, Dr Xu and Thayne, Professor Iain and Millar, Mr David and Peralagu, Mr Uthayasankaran
Authors: Millar, D., Peralagu, U., Li, X., Fu, Y.-C., Gaspar, G., Hurley, P., and Thayne, I.
Subjects:Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Micro- and Nanotechnology
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