The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors

Fu, Y.-C., Peralagu, U. , Millar, D. A.J., Lin, J., Povey, I., Li, X. , Monaghan, S., Droopad, R., Hurley, P. K. and Thayne, I. G. (2017) The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors. Applied Physics Letters, 110(14), 142905. (doi:10.1063/1.4980012)

Fu, Y.-C., Peralagu, U. , Millar, D. A.J., Lin, J., Povey, I., Li, X. , Monaghan, S., Droopad, R., Hurley, P. K. and Thayne, I. G. (2017) The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors. Applied Physics Letters, 110(14), 142905. (doi:10.1063/1.4980012)

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Abstract

This study reports the impact of forming gas annealing (FGA) on the electrical characteristics of sulfur passivated, atomic layer deposited Al2O3 gate dielectrics deposited on (110) oriented n- and p-doped In0.53Ga0.47 As layers metal-oxide-semiconductor capacitors (MOSCAPs). In combination, these approaches enable significant Fermi level movement through the bandgap of both n- and p-doped In0.53Ga0.47 As (110) MOSCAPs. A midgap interface trap density (Dit) value in the range 0.87−1.8×1012 cm−2eV−10.87−1.8×1012 cm−2eV−1 is observed from the samples studied. Close to the conduction band edge, a Dit value of 3.1×1011 cm−2eV−13.1×1011 cm−2eV−1 is obtained. These data indicate the combination of sulfur pre-treatment and FGA is advantageous in passivating trap states in the upper half of the bandgap of (110) oriented In0.53Ga0.47 As. This is further demonstrated by a reduction in border trap density in the n-type In0.53Ga0.47 As (110) MOSCAPs from 1.8×1012 cm−21.8×1012 cm−2 to 5.3×1011 cm−25.3×1011 cm−2 as a result of the FGA process. This is in contrast to the observed increase in border trap density after FGA from 7.3×1011 cm−27.3×1011 cm−2 to 1.4×1012 cm−21.4×1012 cm−2 in p-type In0.53Ga0.47 As (110) MOSCAPs, which suggest FGA is not as effective in passsivating states close to the valence band edge.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Fu, Mr Yen-Chun and Peralagu, Mr Uthayasankaran and Li, Dr Xu and Millar, Mr David
Authors: Fu, Y.-C., Peralagu, U., Millar, D. A.J., Lin, J., Povey, I., Li, X., Monaghan, S., Droopad, R., Hurley, P. K., and Thayne, I. G.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN:0003-6951
ISSN (Online):1077-3118
Published Online:06 April 2017
Copyright Holders:Copyright © 2017 The Authors
First Published:First published in Applied Physics Letters 110(14): 142905
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
634601Compose3Iain ThayneEuropean Commission (EC)619325ENG - ENGINEERING ELECTRONICS & NANO ENG