Sadi, T., Wang, L. and Asenov, A. (2017) Multi-Scale Electrothermal Simulation and Modelling of Resistive Random Access Memory Devices. In: 26th International Workshop on Power and Timing Modeling, Optimization and Simulation (PATMOS 2016), Bremen, Germany, 21-23 Sept 2016, pp. 33-37. ISBN 9781509007332 (doi: 10.1109/PATMOS.2016.7833422)
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Abstract
Resistive random-access memories (RRAMs) operate with low power dissipation, low cost-per-bit, and high endurance, and are suitable for integration in crossbar arrays in 3D chips. These attributes make RRAM devices well-suited for a variety of applications ranging from novel processor architectures and high-density memories to neuromorphic computing and neural networks. We employ a unique suite of simulation tools to study resistance switching in oxide-based RRAM structures. We use Si-rich silica (SiOx) RRAMs as an example in this study. Silica-based RRAM technology provides an additional and unique advantage; it could be easily integrated with silicon microelectronics. Existing modeling work on RRAMs has relied heavily on classical phenomenological methods and two-dimensional (2D) modeling tools. We apply an advanced multi-scale three-dimensional (3D) simulator to investigate switching in these promising devices, and highlight their potential for low-power applications. Our physics-based electrothermal 3D simulator is very well-calibrated with experimental data, coupling self-consistently stochastic kinetic Monte Carlo descriptions of oxygen ion and electron transport, to the local electric fields and temperature. The simulator is used to demonstrate the impact of self-heating effects and also to emphasize on the necessity of 3D physical modelling to predict correctly the switching phenomenon.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Wang, Dr Liping and Sadi, Dr Toufik |
| Authors: | Sadi, T., Wang, L., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISBN: | 9781509007332 |
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