Strain Balancing of MOVPE InAs/GaAs Quantum Dots Using GaAs0.8P0.2

Roberts, T. S. et al. (2016) Strain Balancing of MOVPE InAs/GaAs Quantum Dots Using GaAs0.8P0.2. In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016, ISBN 9784885523069

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Abstract

MOVPE growth of stacked InAs/GaAs QDs with and without GaAs0.8P0.2 strain balancing layers has been studied. The GaAsP layers reduce the accumulated strain whilst maintaining the electrical characteristics. This should enable closer stacking of QD layers leading to higher gain and improved laser performance.

Item Type:Conference Proceedings
Additional Information:This work was supported by the EPSRC under grant EP/I018328/1.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Babazadeh, Dr Nasser and Hogg, Professor Richard and Childs, Dr David
Authors: Roberts, T. S., Stevens, B. J., Clarke, E., Tooley, I., Orchard, J., Farrer, I., Childs, D. T.D., Babazadeh, N., Ozaki, N., Mowbray, D., and Hogg, R. A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:1947-6981
ISBN:9784885523069
Published Online:05 December 2016
Copyright Holders:Copyright © 2016 IEICE
First Published:First published in 2016 International Semiconductor Laser Conference (ISLC)
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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