Nucleation, crystallisation and phase segregation in HfO2 and HfSiO

McGilvery, C.M., McFadzean, S., MacKenzie, M., Docherty, F.T. , Craven, A.J., McComb, D.W. and De Gendt, S. (2008) Nucleation, crystallisation and phase segregation in HfO2 and HfSiO. In: Cullis, A.G. and Midgley, P.A. (eds.) Microscopy of Semiconducting Materials: Proceedings of the 15th Conference, 2-5 April 2007, Cambridge, UK. Series: Springer proceedings in physics, 5 (120). Springer Netherlands, pp. 325-328. ISBN 9781402086144 (doi: 10.1007/978-1-4020-8615-1_71)

Abstract

Hafnia and hafnium silicate thin films and bulk powders were analysed using thermal analysis, X-ray diffraction and transmission electron microscope techniques to improve understanding of the crystallisation mechanism of the dielectric material. It was found that thin films exhibit instability under device processing conditions. Starting precursors greatly affect the crystallisation pathway in the bulk materials. By studying these phenomena a better understanding of the chemistry involved during crystallisation can be gained.

• Item Type: Book Sections
• Status: Published
• Glasgow Author(s) Enlighten ID: McComb, Dr David and Docherty, Dr Frances and Craven, Professor Alan and McFadzean, Dr Sam and MacKenzie, Dr Maureen
• Authors: McGilvery, C.M., McFadzean, S., MacKenzie, M., Docherty, F.T., Craven, A.J., McComb, D.W., and De Gendt, S.
• College/School: College of Science and Engineering > School of Chemistry; College of Science and Engineering > School of Physics and Astronomy
• Publisher: Springer Netherlands
• ISBN: 9781402086144