Charge collection efficiency of an irradiated cryogenic double- p silicon detector

Borer, K. et al. (2001) Charge collection efficiency of an irradiated cryogenic double- p silicon detector. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 462(3), 474 -483. (doi:10.1016/S0168-9002(01)00198-X)

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Publisher's URL: http://dx.doi.org/10.1016/S0168-9002(01)00198-X

Abstract

We present results on the measurement of the charge collection efficiency of a p(+) /n/p(+) silicon detector irradiated to 1 x 10(15) n/cm(2), Operated in the temperature range between 80 and 200 K. For comparison, measurements obtained with a standard silicon diode (p(+) /n/n(+)), irradiated to the same fluence, are also presented. Both detectors show a dramatic increase of the CCE when operated at temperatures around 130 K. The double-p detector shows a higher CCE regardless of the applied bias and temperature, besides being symmetric with respect to the polarity of the bias voltage.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:O'Shea, Professor Val and Smith, Professor Kenway and Bell, Dr William
Authors: Borer, K., Janos, S., Li, Z., Dezillie, B., Da Via, C., Granata, V., Casagrande, L., de Boer, R.W.I., Lourenco, C., Niinikoski, T.O., Palmieri, V.G., Chapuy, S., Dimcovski, Z., Grigoriev, E., Bell, W., Devine, S.R.H., Ruggiero, G., O'Shea, V., Smith, K., Berglund, P., De Boer, W., Hauler, F., Heising, S., Jungermann, L., Abreu, M., Rato, P., Sousa, P., Cindro, V., Mikuz, M., Zavrtanik, M., Esposito, A., Paul, S., Buontempo, S., D'Ambrosio, N., Pagano, S., Eremin, V., and Verbitskaya, E.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
Publisher:Elsevier BV
ISSN:0168-9002
ISSN (Online):1872-9576

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