Fabrication and Characterization of Silicon Nanowires with Width Down to 1.9 nm

Mirza, M. M. , Thoms, S. , Macintyre, D., MacLaren, D. and Paul, D. (2013) Fabrication and Characterization of Silicon Nanowires with Width Down to 1.9 nm. In: 39th International Conference on Micro and Nano Engineering (MNE), London, UK, 16-19 Sep 2013,

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Electron beam lithography, low-damage dry etch and thermal oxidation have been used to pattern Si nanowire devices for sensing applications with physical Si widths down to 1.9 nm. The electrical properties as a function of wire width and doping density have been studied and start to demonstrate depletion effects for devices with lithographic widths below 20 nm for wires doped at 8x1019 cm–3 and 30 nm for wires doped at 2x1019 cm–3. Si nanowires are being investigated for applications including transistors, sensors, electrometers and thermoelectric generators. Whilst many examples of bottom-up nanowires have been demonstrated, top-down fabrication techniques still dominate manufactured devices. This paper describes the techniques to fabricate Si nanowires down to 1.9 nm widths and the electrical and physical properties of the fabricated devices.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Thoms, Dr Stephen and Mirza, Dr Muhammad M A and Macintyre, Dr Douglas and Paul, Professor Douglas and MacLaren, Dr Donald
Authors: Mirza, M. M., Thoms, S., Macintyre, D., MacLaren, D., and Paul, D.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Research Group:Semiconductor Device Group and James Watt Nanofabrication Centre
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