Silicon Nanowires with Widths Down to 1.9 nm for Breath Analysis Applications

Mirza, M. M. , MacLaren, D. and Paul, D. (2013) Silicon Nanowires with Widths Down to 1.9 nm for Breath Analysis Applications. Glasgow Research Partnership in Engineering (GRPE) Conference, Glasgow, UK, 19 Jun 2013.

Abstract

Nanowires have a large range of applications including energy harvesting and sensors including breath analysis. A robust process has been developed for the fabrication of highly doped silicon-on-insulator (SOI) Si nanowires aimed at sensors for breath analysis. Devices with Si widths down to 1.9 nm have been developed using robust top-down fabrication techniques and the electrical properties characterized. A robust process to fabricate Si nanowires with widths down to 1.9 nm has been developed using electron beam lithography (EBL) and low-damage dry etch on heavily doped SOI wafers. An HSQ EBL resist process was developed allowing 5 nm linewidth. Then a low damage SF6, C4F8 dry etch process was developed with a low dc bias of –23 V to minimize the damage for energetic ions in the plasma. The nanowires were then thermal oxidized to passive the surface states using dry oxidation which produced a 3 nm thick oxide. Finally low resistance NiSi contacts were patterned and the devices measured to determine the electrical properties.

• Item Type: Conference or Workshop Item
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Mirza, Dr Muhammad M A and Paul, Professor Douglas and MacLaren, Professor Donald
• Authors: Mirza, M. M., MacLaren, D., and Paul, D.
• Subjects: Q Science > QC Physics
• College/School: College of Science and Engineering > School of Engineering; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering; College of Science and Engineering > School of Physics and Astronomy
• Research Group: Semiconductor Device Group and James Watt Nanofabrication Centre