Silicon Nanowires with Widths Down to 1.9 nm for Breath Analysis Applications

Mirza, M. M. , MacLaren, D. and Paul, D. (2013) Silicon Nanowires with Widths Down to 1.9 nm for Breath Analysis Applications. Glasgow Research Partnership in Engineering (GRPE) Conference, Glasgow, UK, 19 Jun 2013.

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Abstract

Nanowires have a large range of applications including energy harvesting and sensors including breath analysis. A robust process has been developed for the fabrication of highly doped silicon-on-insulator (SOI) Si nanowires aimed at sensors for breath analysis. Devices with Si widths down to 1.9 nm have been developed using robust top-down fabrication techniques and the electrical properties characterized. A robust process to fabricate Si nanowires with widths down to 1.9 nm has been developed using electron beam lithography (EBL) and low-damage dry etch on heavily doped SOI wafers. An HSQ EBL resist process was developed allowing 5 nm linewidth. Then a low damage SF6, C4F8 dry etch process was developed with a low dc bias of –23 V to minimize the damage for energetic ions in the plasma. The nanowires were then thermal oxidized to passive the surface states using dry oxidation which produced a 3 nm thick oxide. Finally low resistance NiSi contacts were patterned and the devices measured to determine the electrical properties.

Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Mirza, Dr Muhammad M A and MacLaren, Dr Donald and Paul, Professor Douglas
Authors: Mirza, M. M., MacLaren, D., and Paul, D.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Research Group:Semiconductor Device Group and James Watt Nanofabrication Centre

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