GaAs structures for X-ray imaging detectors

Ayzenshtat, G.I. et al. (2001) GaAs structures for X-ray imaging detectors. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 466(1), 25 -32. (doi: 10.1016/S0168-9002(01)00820-8)

Abstract

A comparative analysis of characteristics of detector structures fabricated by means of technology of epitaxial growth of an undoped high-resistive GaAs layer as well as structures based on SI-GaAs compensated with Cr during a diffusion process is presented in this work. Advantages and disadvantages of the proposed methods of formation of high- resistive layers, their electrophysical characteristics and properties are examined. Limit parameters of the detector structures which can be achieved by using a combination of technological methods are analyzed.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Smith, Professor Kenway
• Authors: Ayzenshtat, G.I., Bakin, N.N., Budnitsky, D.L., Drugova, E.P., Germogenov, V.P., Khludkov, S.S., Koretskaya, O.B., Okaevich, L.S., Porokhovnichenko, L.P., Potapov, A.I., Smith, K.M., Tolbanov, O.P., Tyazhev, A.V., Vilisova, M.D., and Vorobiev, A.P.
• Subjects: Q Science > QC Physics
• College/School: College of Science and Engineering > School of Physics and Astronomy
• Journal Name: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
• Publisher: Elsevier BV
• ISSN: 0168-9002
• ISSN (Online): 1872-9576