Najda, S. P. et al. (2016) AlGaInN Laser Diode Technology for Systems Applications. In: Gallium Nitride Materials and Devices XI, San Francisco, CA, USA, 15-18 Feb 2016, p. 974819. ISBN 9781628419832 (doi: 10.1117/12.2207231)
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Abstract
Gallium Nitride (GaN) laser diodes fabricated from the AlGaInN material system is an emerging technology that allows laser diodes to be fabricated over a very wide wavelength range from u.v. to the visible, and is a key enabler for the development of new system applications such as (underwater and terrestrial) telecommunications, quantum technologies, display sources and medical instrumentation.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Watson, Dr Scott and Kelly, Professor Anthony |
Authors: | Najda, S. P., Perlin, P., Suski, T., Marona, L., Bockowski, M., Leszczyński, M., Wisniewski, P., Czernecki, R., Kucharski, R., Targowski, G., Watson, S., and Kelly, A.E. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
ISSN: | 0277-786X |
ISBN: | 9781628419832 |
Copyright Holders: | Copyright © 2016 SPIE |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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