High Aspect Ratio (~25:1) Sub-10 Nm HSQ Lines Using Electron Beam Lithography

Mirza, M. M. A. , Zhou, H., Docherty, K., Thoms, S. , Macintyre, D. and Paul, D. (2012) High Aspect Ratio (~25:1) Sub-10 Nm HSQ Lines Using Electron Beam Lithography. In: EIPBN 2012: The 56th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication, Waikoloa,HI USA, 29 May - 01 June 2012., Waikoloa, HI, USA, 29 May - 1 June 2012,

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Publisher's URL: http://eipbn.org/2012/eipbn-2012-posters-p01-to-p04/


This paper reports the challenging work in producing ultra high aspect ratio ~25:1 sub-10 nm HSQ lines using 250 nm thick HSQ resist, which is successfully used as the etch mask and provides the flexibility for high resolution pattern transfer.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Mirza, Dr Muhammad M A and Zhou, Dr Haiping and Macintyre, Dr Douglas and Paul, Professor Douglas and Thoms, Dr Stephen and Docherty, Mr Kevin
Authors: Mirza, M. M. A., Zhou, H., Docherty, K., Thoms, S., Macintyre, D., and Paul, D.
Subjects:Q Science > Q Science (General)
College/School:College of Science and Engineering > School of Engineering
Research Group:Semiconductor Device Group and James Watt Nanofabrication Centre

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