Low temperature epitaxy of Si/Si1-xGex/Si multilayers by low pressure RTCVD for very thin SOI applications

McNeill, D.W., Gay, D.L., Li, X. , Armstrong, B.M. and Gamble, H.S. (1998) Low temperature epitaxy of Si/Si1-xGex/Si multilayers by low pressure RTCVD for very thin SOI applications. MRS Proceedings, 533, (doi: 10.1557/PROC-533-307)

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Abstract

The growth by rapid thermal chemical vapour deposition of Si/Si1-xGex/Si multilayer structures, suitable for thin bond and etch-back silicon-on-insulator fabrication has been investigated. Surface topography was studied by scanning probe microscopy, and layer contamination by secondary ion mass spectrometry. Smooth layers are only achieved at high growth temperatures (>700°C), and when surface oxide contamination is reduced by a combination of ex-situ HF vapour treatment and in-situ high temperature H2 bake. A surface peak-to-peak roughness of 15nm for a Si/Si1-xGex/Si multilayer structure has been achieved by reducing the growth time at 700°C or less. Further improvement is possible, especially if carbon contamination can be reduced.

Item Type:Articles
Additional Information:MRS 1998 Spring Meeting, Symposium FF: Epitaxy and Applications of Si-Based Heterostructures, San Francisco, USA, 13-17 Apr 1998
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu
Authors: McNeill, D.W., Gay, D.L., Li, X., Armstrong, B.M., and Gamble, H.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:MRS Proceedings
Publisher:Cambridge University Press
ISSN:1946-4274
ISSN (Online):1946-4274
Published Online:01 February 2011

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