McNeill, D.W., Gay, D.L., Li, X. , Armstrong, B.M. and Gamble, H.S. (1998) Low temperature epitaxy of Si/Si1-xGex/Si multilayers by low pressure RTCVD for very thin SOI applications. MRS Proceedings, 533, (doi: 10.1557/PROC-533-307)
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Abstract
The growth by rapid thermal chemical vapour deposition of Si/Si1-xGex/Si multilayer structures, suitable for thin bond and etch-back silicon-on-insulator fabrication has been investigated. Surface topography was studied by scanning probe microscopy, and layer contamination by secondary ion mass spectrometry. Smooth layers are only achieved at high growth temperatures (>700°C), and when surface oxide contamination is reduced by a combination of ex-situ HF vapour treatment and in-situ high temperature H2 bake. A surface peak-to-peak roughness of 15nm for a Si/Si1-xGex/Si multilayer structure has been achieved by reducing the growth time at 700°C or less. Further improvement is possible, especially if carbon contamination can be reduced.
Item Type: | Articles |
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Additional Information: | MRS 1998 Spring Meeting, Symposium FF: Epitaxy and Applications of Si-Based Heterostructures, San Francisco, USA, 13-17 Apr 1998 |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Li, Dr Xu |
Authors: | McNeill, D.W., Gay, D.L., Li, X., Armstrong, B.M., and Gamble, H.S. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | MRS Proceedings |
Publisher: | Cambridge University Press |
ISSN: | 1946-4274 |
ISSN (Online): | 1946-4274 |
Published Online: | 01 February 2011 |
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