Elgaid, K., Li, X. , Williamson, F., McLelland, H., Ferguson, S.M., Holland, M.C., Beaumont, S.P. and Thayne, I.G. (1999) Optimisation of DC and RF performance of GaAs HEMT-based Schottky diodes. Electronics Letters, 35(19), pp. 1678-1679. (doi: 10.1049/el:19991104)
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Abstract
The authors show that in a GaAs HEMT-based monolithic millimetre-wave integrated circuit process flow, prior to gate metallisation the introduction of a hydrofluoric acid cleaning process after gate recess etching results in a significant reduction in the Schottky diode turn-on voltage, series resistance and bias dependent RF junction resistance.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Ferguson, Mrs Susan and Li, Dr Xu and Thayne, Prof Iain and McLelland, Mrs Helen and Elgaid, Dr Khaled |
| Authors: | Elgaid, K., Li, X., Williamson, F., McLelland, H., Ferguson, S.M., Holland, M.C., Beaumont, S.P., and Thayne, I.G. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Electronics Letters |
| Publisher: | The Institution of Engineering & Technology |
| ISSN: | 0013-5194 |
| ISSN (Online): | 350-911X |
| Published Online: | 06 August 2002 |
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