Optimisation of DC and RF performance of GaAs HEMT-based Schottky diodes

Elgaid, K., Li, X. , Williamson, F., McLelland, H., Ferguson, S.M., Holland, M.C., Beaumont, S.P. and Thayne, I.G. (1999) Optimisation of DC and RF performance of GaAs HEMT-based Schottky diodes. Electronics Letters, 35(19), pp. 1678-1679. (doi:10.1049/el:19991104)

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Abstract

The authors show that in a GaAs HEMT-based monolithic millimetre-wave integrated circuit process flow, prior to gate metallisation the introduction of a hydrofluoric acid cleaning process after gate recess etching results in a significant reduction in the Schottky diode turn-on voltage, series resistance and bias dependent RF junction resistance.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Ferguson, Mrs Susan and Li, Dr Xu and Thayne, Professor Iain and McLelland, Mrs Helen and Elgaid, Dr Khaled
Authors: Elgaid, K., Li, X., Williamson, F., McLelland, H., Ferguson, S.M., Holland, M.C., Beaumont, S.P., and Thayne, I.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:The Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):350-911X
Published Online:06 August 2002

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