Fabrication of 30 nm T Gates Using SiNx as a Supporting and Definition Layer

Chen, Y., Edgar, D., Li, X. , Macintyre, D. and Thoms, S. (2000) Fabrication of 30 nm T Gates Using SiNx as a Supporting and Definition Layer. In: 44th International Conference on Electron Ion and Photon Beam Technology and Nanofabrication (EIPBN), Rancho Mirage, CA, USA, 30 May - 2 Jun 2000,

Abstract

No abstract available.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Thoms, Dr Stephen and Li, Dr Xu and Macintyre, Dr Douglas
• Authors: Chen, Y., Edgar, D., Li, X., Macintyre, D., and Thoms, S.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering