Fabrication of 30 nm T Gates Using SiNx as a Supporting and Definition Layer

Chen, Y., Edgar, D., Li, X. , Macintyre, D. and Thoms, S. (2000) Fabrication of 30 nm T Gates Using SiNx as a Supporting and Definition Layer. In: 44th International Conference on Electron Ion and Photon Beam Technology and Nanofabrication (EIPBN), Rancho Mirage, CA, USA, 30 May - 2 Jun 2000,

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Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Macintyre, Dr Douglas and Thoms, Dr Stephen
Authors: Chen, Y., Edgar, D., Li, X., Macintyre, D., and Thoms, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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