Mid-Infrared Plasmonic Platform Based on n-Doped Ge-on-Si: Molecular Sensing with Germanium Nano-Antennas on Si

Baldassarre, L. et al. (2016) Mid-Infrared Plasmonic Platform Based on n-Doped Ge-on-Si: Molecular Sensing with Germanium Nano-Antennas on Si. In: 41st International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2016), Copenhagen, Denmark, 25-30 Sept 2016, ISBN 9781467384858 (doi:10.1109/IRMMW-THz.2016.7758725)

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Abstract

CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate n-type doped germanium epilayers grown on Si substrates. We design and realize Ge nanoantennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit them for molecular sensing in the mid-infrared.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Samarelli, Mr Antonio and Paul, Professor Douglas and Gallacher, Dr Kevin
Authors: Baldassarre, L., Sakat, E., Bollani, M., Samarelli, A., Gallacher, K., Frigerio, J., Pellegrini, G., Giliberti, V., Ballabio, A., Fischer, M.P., Brida, D., Isella, G., Paul, D.J., Ortolani, M., and Biagioni, P.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:2162-2035
ISBN:9781467384858
Copyright Holders:Copyright © 2016 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
634451GEMINIDouglas PaulEuropean Commission (EC)613055ENG - ENGINEERING ELECTRONICS & NANO ENG