Effects of Pressure and Capping Layer Thickness on Sub-Micron T-Gate Recess Etching of GaAs pHEMTs by SiCl4/SiF4/O2 Reactive Ion Etch

Li, X. , Elgaid, K., McLelland, H. and Thayne, I.G. (2000) Effects of Pressure and Capping Layer Thickness on Sub-Micron T-Gate Recess Etching of GaAs pHEMTs by SiCl4/SiF4/O2 Reactive Ion Etch. In: 26th International Conference on Micro- and Nano-Engineering, Jena, Germany, 18-21 Sept 2000,

Abstract

No abstract available.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Li, Dr Xu and Thayne, Prof Iain and McLelland, Mrs Helen and Elgaid, Dr Khaled
• Authors: Li, X., Elgaid, K., McLelland, H., and Thayne, I.G.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering