Effects of Pressure and Capping Layer Thickness on Sub-Micron T-Gate Recess Etching of GaAs pHEMTs by SiCl4/SiF4/O2 Reactive Ion Etch

Li, X. , Elgaid, K., McLelland, H. and Thayne, I.G. (2000) Effects of Pressure and Capping Layer Thickness on Sub-Micron T-Gate Recess Etching of GaAs pHEMTs by SiCl4/SiF4/O2 Reactive Ion Etch. In: 26th International Conference on Micro- and Nano-Engineering, Jena, Germany, 18-21 Sept 2000,

Li, X. , Elgaid, K., McLelland, H. and Thayne, I.G. (2000) Effects of Pressure and Capping Layer Thickness on Sub-Micron T-Gate Recess Etching of GaAs pHEMTs by SiCl4/SiF4/O2 Reactive Ion Etch. In: 26th International Conference on Micro- and Nano-Engineering, Jena, Germany, 18-21 Sept 2000,

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Abstract

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Thayne, Professor Iain and McLelland, Mrs Helen and Elgaid, Dr Khaled
Authors: Li, X., Elgaid, K., McLelland, H., and Thayne, I.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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