Fabrication of 30 nm T gates using SiNx as a supporting and definition layer

Chen, Y., Edgar, D., Li, X. , Macintyre, D. and Thoms, S. (2000) Fabrication of 30 nm T gates using SiNx as a supporting and definition layer. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 18(6), p. 3521. (doi:10.1116/1.1321279)

Chen, Y., Edgar, D., Li, X. , Macintyre, D. and Thoms, S. (2000) Fabrication of 30 nm T gates using SiNx as a supporting and definition layer. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 18(6), p. 3521. (doi:10.1116/1.1321279)

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Abstract

A new process has been developed to fabricate 30 nm T gates for high performance metal–semiconductor field effect transistors and high electron mobility transistors. The fabrication of short gate length T gates becomes increasingly difficult as the footwidth of the gate is made smaller and this is particularly true when the footwidth is less than 50 nm. In this process a thin SiNxSiNx layer is deposited on the substrate prior to the application of a bilayer of poly(methylmethacrylate)/Shipley UVIII resist. After resist patterning by electron beam lithography the nitride layer is etched at a low bias voltage that causes negligible substrate damage. This process step helps to define the gate footwidth and improves mechanical stability of the gate. The measured gate resistance was 375 Ω/mm.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thoms, Dr Stephen and Li, Dr Xu and Macintyre, Dr Douglas
Authors: Chen, Y., Edgar, D., Li, X., Macintyre, D., and Thoms, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Publisher:American Institute of Physics ; American Vacuum Society
ISSN:1071-1023
ISSN (Online):1520-8567

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