A Low Damage Subtractive Ohmic Contact Process for III-V Mosfets

Hill, R.J.W., Li, X. , Moran, D.A.J. , Zhou, H. and Thayne, I.G. (2006) A Low Damage Subtractive Ohmic Contact Process for III-V Mosfets. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

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Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Zhou, Dr Haiping and Thayne, Professor Iain and Hill, Mr Richard and Moran, Dr David
Authors: Hill, R.J.W., Li, X., Moran, D.A.J., Zhou, H., and Thayne, I.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IOP/EPSRC

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