Optical Emission Spectrometry of Plasma in Low-Damage Sub-100 Nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors

Li, X. , Zhou, H., Wilkinson, C. D.W. and Thayne, I. G. (2006) Optical Emission Spectrometry of Plasma in Low-Damage Sub-100 Nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors. 6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing (ICRP-6/SPP-23), 24-27 Jan 2006. pp. 8364-8369.

Li, X. , Zhou, H., Wilkinson, C. D.W. and Thayne, I. G. (2006) Optical Emission Spectrometry of Plasma in Low-Damage Sub-100 Nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors. 6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing (ICRP-6/SPP-23), 24-27 Jan 2006. pp. 8364-8369.

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Abstract

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Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Zhou, Dr Haiping and Thayne, Professor Iain and Wilkinson, Professor Christopher and Li, Dr Xu
Authors: Li, X., Zhou, H., Wilkinson, C. D.W., and Thayne, I. G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Japanese Journal of Applied Physics
Publisher:IOP Publishing
ISSN (Online):1347-4065

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