Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

Martinez, A., Price, A., Valin, R., Aldegunde, M. and Barker, J. (2016) Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective. Journal of Computational Electronics, 15(4), pp. 1130-1147. (doi: 10.1007/s10825-016-0851-0)

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This paper reviews our previous theoretical studies and gives further insight into phonon scattering in 3D small nanotransistors using non-equilibrium Green function methodology. The focus is on very small gate-all-around nanowires with Si, GaAs or InGaAs cores. We have calculated phonon-limited mobility and transfer characteristics for a variety of cross-sections at low and high drain bias. The nanowire cross-sectional area is shown to have a significant impact on the phonon-limited mobility and on the current reduction. In a study of narrow Si nanowires we have examined the spatially resolved power dissipation and the validity of Joule’s law. Our results show that only a fraction of the power is dissipated inside the drain region even for a relatively large simulated length extension (approximately 30 nm). When considering large source regions in the simulation domain, at low gate bias, a slight cooling of the source is observed. We have also studied the impact of the real part of phonon scattering self-energy on a narrow nanowire transistor. This real part is usually neglected in nanotransistor simulation, whereas we compute its impact on current–voltage characteristic and mobility. At low gate bias, the imaginary part strongly underestimated the current and the mobility by 50 %. At high gate bias, the two mobilities are similar and the effect on the current is negligible.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Barker, Professor John
Authors: Martinez, A., Price, A., Valin, R., Aldegunde, M., and Barker, J.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Journal of Computational Electronics
ISSN (Online):1572-8137
Published Online:21 July 2016
Copyright Holders:Copyright © 2016 The Authors
First Published:First published in Journal of Computational Electronics 15(4): 1130-1147
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
530471Quantum Transport Simulations of Next Generation Field Effect TransistorsAntonio MartinezEngineering & Physical Sciences Research Council (EPSRC)EP/I004084/1ENG - ENGINEERING ELECTRONICS & NANO ENG