High Performance Enhancement Mode III-V MOSFETs

Moran, D.A.J. et al. (2007) High Performance Enhancement Mode III-V MOSFETs. IBM Workshop on Advanced Oxides, Zurich, Switzerland, June 2007.

Full text not currently available from Enlighten.


No abstract available.

Item Type:Conference or Workshop Item
Glasgow Author(s) Enlighten ID:Zhou, Dr Haiping and Thayne, Prof Iain and Thoms, Dr Stephen and Hill, Mr Richard and Stanley, Professor Colin and Moran, Dr David and Longo, Dr Paolo and Li, Dr Xu and Macintyre, Dr Douglas and Long, Professor Andrew and Asenov, Professor Asen and Paterson, Dr Gary and Craven, Professor Alan and Kalna, Dr Karol
Authors: Moran, D.A.J., Asenov, A., Craven, A.J., Holland, M.C., Hill, R.J.W., Kalna, K., Li, X., Long, A.R., Longo, P., MacIntyre, D., Hill, R., Paterson, G., Scott, J., Stanley, C.R., Thoms, S., Wilson, J., Zhou, H., and Thayne, I.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy

University Staff: Request a correction | Enlighten Editors: Update this record