Mid-infrared sensing using heavily doped germanium plasmonics on silicon substrates

Baldassarre, L. et al. (2016) Mid-infrared sensing using heavily doped germanium plasmonics on silicon substrates. ECS Transactions, 75(8), pp. 247-251. (doi:10.1149/07508.0247ecst)

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Abstract

Heavily-doped semiconductor films are very promising to produce mid-infrared plasmonic devices for a wide range of sensing applications because the real part of the dielectric function of the film is negative and broadly tunable in this wavelength range. In this work, we investigate, n-type doped Ge epilayers grown on Si substrates. We design and realize Ge nano-antennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit these resonances for molecular sensing in the mid-infrared.

Item Type:Articles
Additional Information:PRiME 2016/230th ECS Meeting, Honolulu, HI, USA, 2-7 Oct 2016.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Samarelli, Mr Antonio and Paul, Professor Douglas and Gallacher, Dr Kevin
Authors: Baldassarre, L., Sakat, E., Frigerio, J., Frigerio, J.B.J., Samarelli, A., Giliberti, V., Pellegrini, G., Gallacher, K., Fischer, M., Brida, D., Isella, G., Biagioni, P., Paul, D. J., and Ortolani, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Journal Name:ECS Transactions
Publisher:The Electrochemical Society
ISSN:1938-6737
ISSN (Online):1938-6737
Copyright Holders:Copyright © 2016 The Eletrochemical Society
First Published:First published in ECS Transactions 75(8):247-251
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
634451GEMINIDouglas PaulEuropean Commission (EC)613055ENG - ENGINEERING ELECTRONICS & NANO ENG