Gallacher, K. , Ballabio, A., Millar, R. , Frigerio, J., Bashir, A., MacLaren, I. , Isella, G., Ortolani, M. and Paul, D. J. (2016) Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates. ECS Transactions, 75(8), pp. 253-256. (doi: 10.1149/07508.0253ecst)
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Abstract
Mid-infrared intersubband absorption from p-Ge quantum wells with Si0.5Ge0.5 barriers grown on a relaxed Si0.2Ge0.8 buffer on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness. Fourier transform infra-red transmission demonstrate clear absorption peaks corresponding to intersubband transitions among confined hole states. The work indicates an approach that will allow quantum well intersubband photodetectors to be realized on Si substrates in the important atmospheric transmission window of 8-13 μm where many chemical and biological molecules have unique molecular absorption lines for spectroscopic identification.
Item Type: | Articles |
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Additional Information: | PRiME 2016/230th ECS Meeting, Honolulu, HI, USA, 2-7 Oct 2016. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas and Millar, Dr Ross and MacLaren, Dr Ian and Bashir, Ms Aneeqa and Gallacher, Dr Kevin |
Authors: | Gallacher, K., Ballabio, A., Millar, R., Frigerio, J., Bashir, A., MacLaren, I., Isella, G., Ortolani, M., and Paul, D. J. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Physics and Astronomy |
Journal Name: | ECS Transactions |
Publisher: | The Electrochemical Society |
ISSN: | 1938-6737 |
ISSN (Online): | 1938-6737 |
Copyright Holders: | Copyright © 2016 The Eletrochemical Society |
First Published: | First published in ECS Transactions 75(8):253-256 |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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