Impact of Strain on the Performance of Si Nanowires Transistors at the Scaling Limit: A 3D Monte Carlo/2D Poisson Schrodinger Simulation Study

Al-Ameri, T. , Georgiev, V. P. , Lema, F.-A., Sadi, T., Wang, X., Towie, E., Riddet, C., Alexander, C. and Asenov, A. (2016) Impact of Strain on the Performance of Si Nanowires Transistors at the Scaling Limit: A 3D Monte Carlo/2D Poisson Schrodinger Simulation Study. In: SISPAD 2016: International Conference on Simulation of Semiconductor Processes and Devices, Nuremberg, Germany, 6-8 Sept 2016, pp. 213-216. ISBN 9781509008186 (doi:10.1109/SISPAD.2016.7605185)

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Abstract

In this work we investigate the correlation between channel strain and device performance in various n-type Si-NWTs. We establish a correlation between strain, gate length and cross-section dimension of the transistors. For the purpose of this paper we simulate Si NWTs with a <110> channel orientation, four different ellipsoidal channel cross-sections and five gate lengths: 4nm, 6nm, 8nm, 10nm and 12nm. We have also analyzed the impact of strain on drain-induced barrier lowering (DIBL) and the subthreshold slope (SS). All simulations are based on a quantum mechanical description of the mobile charge distribution in the channel obtained from a 2D solution of the Schrödinger equation in multiple cross sections along the current path, which is mandatory for nanowires with such ultra-scale dimensions. The current transport along the channel is simulated using 3D Monte Carlo (MC) and drift-diffusion (DD) approaches.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Towie, Dr Ewan and Sadi, Dr Toufik and Georgiev, Dr Vihar and Wang, Dr Xingsheng and Asenov, Professor Asen and Al-Ameri, Talib Mahmood Ali and Riddet, Mr Craig
Authors: Al-Ameri, T., Georgiev, V. P., Lema, F.-A., Sadi, T., Wang, X., Towie, E., Riddet, C., Alexander, C., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:1946-1577
ISBN:9781509008186
Copyright Holders:Copyright © 2016 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
703701SUPERAID7Asen AsenovEuropean Commission (EC)688101ENG - ENGINEERING ELECTRONICS & NANO ENG

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