An Anisotropic Low Power, Low DC Bias, SF6/C4F8 Inductively Coupled Plasma Etch Process of Molybdenum with Critical Dimension of 30 nm Suitable for Compound Semiconductor Devices

Cao, M., Li, X. and Thayne, I. (2014) An Anisotropic Low Power, Low DC Bias, SF6/C4F8 Inductively Coupled Plasma Etch Process of Molybdenum with Critical Dimension of 30 nm Suitable for Compound Semiconductor Devices. In: 58th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN 2014), Washington, DC, USA, 27-30 May 2014,

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Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Thayne, Professor Iain
Authors: Cao, M., Li, X., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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