Cao, M., Li, X. and Thayne, I. (2014) An Anisotropic Low Power, Low DC Bias, SF6/C4F8 Inductively Coupled Plasma Etch Process of Molybdenum with Critical Dimension of 30 nm Suitable for Compound Semiconductor Devices. In: 58th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN 2014), Washington, DC, USA, 27-30 May 2014,
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Abstract
No abstract available.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Li, Dr Xu and Thayne, Prof Iain |
Authors: | Cao, M., Li, X., and Thayne, I. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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