Energy-Band Structure of Atomic Layer Deposited Al2O3 & Sulphur Passivated Molecular Beam Epitaxially Grown (110) In0.53Ga0.47As Surfaces

Fu, Y.-C., Peralagu, U. , Ignatova, O. , Li, X. , Droopad, R., Thayne, I. , Lin, J., Povey, I., Monaghan, S. and Hurley, P. (2015) Energy-Band Structure of Atomic Layer Deposited Al2O3 & Sulphur Passivated Molecular Beam Epitaxially Grown (110) In0.53Ga0.47As Surfaces. In: 11th Conference on PhD Research in Microelectronics and Electronics (IEEE PRIME 2015), Glasgow, UK, 29 June - 2 July 2015,

Abstract

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• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Thayne, Prof Iain and Fu, Mr Yen-Chun and Peralagu, Mr Uthayasankaran and Li, Dr Xu and Ignatova, Dr Olesya
• Authors: Fu, Y.-C., Peralagu, U., Ignatova, O., Li, X., Droopad, R., Thayne, I., Lin, J., Povey, I., Monaghan, S., and Hurley, P.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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