Realisation of Low Annealing Temperature and Low Resistance Ohmic Contacts forAlGaN/GaN-Based Power Devices Via SiH4 Inductively Coupled Plasma Treatment

Li, X. , Floros, K., Hemakumara, D., Moran, D. and Thayne, I. G. (2015) Realisation of Low Annealing Temperature and Low Resistance Ohmic Contacts forAlGaN/GaN-Based Power Devices Via SiH4 Inductively Coupled Plasma Treatment. In: UK Semiconductor Conference, Sheffield, UK, 1-2 July 2015,

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Abstract

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Thayne, Professor Iain and Moran, Dr David and Hemakumara, Miss Dilini
Authors: Li, X., Floros, K., Hemakumara, D., Moran, D., and Thayne, I. G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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