Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Abstract

No abstract available.

• Item Type: Conference Proceedings
• Glasgow Author(s) Enlighten ID: Wasige, Professor Edward and Li, Dr Xu and Cho, Dr Sung-Jin and Thayne, Prof Iain and Ternent, Dr Gary and Moran, Professor David and Hemakumara, Miss Dilini and Ignatova, Dr Olesya
• Authors: Floros, K., Li, X., Guiney, I., Cho, S.-J., Ternent, G., Hemakumara, D., Ignatova, O., Moran, D. A.J., Wasige, E., Humphreys, C. J., and Thayne, I. G.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering