Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

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Abstract

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Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Ternent, Dr Gary and Li, Dr Xu and Cho, Dr Sungjin and Thayne, Professor Iain and Moran, Dr David and Hemakumara, Miss Dilini and Ignatova, Dr Olesya
Authors: Floros, K., Li, X., Guiney, I., Cho, S.-J., Ternent, G., Hemakumara, D., Ignatova, O., Moran, D. A.J., Wasige, E., Humphreys, C. J., and Thayne, I. G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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