Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

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Abstract

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Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Ternent, Dr Gary and Li, Dr Xu and Cho, Dr Sung-Jin and Thayne, Prof Iain and Moran, Dr David and Hemakumara, Miss Dilini and Ignatova, Dr Olesya
Authors: Floros, K., Li, X., Guiney, I., Cho, S.-J., Ternent, G., Hemakumara, D., Ignatova, O., Moran, D. A.J., Wasige, E., Humphreys, C. J., and Thayne, I. G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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