Development of an Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation in Chlorine Gas and its Argon Plasma Removal for Precision Nanometer Scale Thin Layer Etch in GaN-Based Power Device Fabrications

Li, X. , Floros, K., Cho, S.-J., Guiney, I., Moran, D. and Thayne, I. G. (2016) Development of an Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation in Chlorine Gas and its Argon Plasma Removal for Precision Nanometer Scale Thin Layer Etch in GaN-Based Power Device Fabrications. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

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Abstract

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Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Cho, Dr Sungjin and Thayne, Professor Iain and Moran, Dr David
Authors: Li, X., Floros, K., Cho, S.-J., Guiney, I., Moran, D., and Thayne, I. G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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