An Atomic Layer Etch Process Based on a Cycled Procedure of Chlorination in Cl2 and Argon Plasma Removal of Chlorides for GaN Based Device Fabrication

Li, X. , Floros, K., Cho, S.-J., Guiney, I., Moran, D. and Thayne, I. G. (2016) An Atomic Layer Etch Process Based on a Cycled Procedure of Chlorination in Cl2 and Argon Plasma Removal of Chlorides for GaN Based Device Fabrication. In: 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 9th International Conference on Plasma-Nano Technology & Science (ISPlasma2016 / IC-PLANTS2016), Nagoya, Japan, 6-10 March 2016,

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Abstract

No abstract available.

Item Type:Conference Proceedings
Additional Information:Excellent Presentation Award.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Cho, Dr Sungjin and Thayne, Professor Iain and Moran, Dr David
Authors: Li, X., Floros, K., Cho, S.-J., Guiney, I., Moran, D., and Thayne, I. G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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