Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications

Li, X. , Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. In: UK Semiconductor Conference, Sheffield, UK, 6-7 July 2016, (Unpublished)

Full text not currently available from Enlighten.

Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Unpublished
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Fu, Mr Yen-Chun and Li, Dr Xu and Cho, Dr Sungjin and Hemakumara, Miss Dilini
Authors: Li, X., Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D., and Thayne, I. G.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Related URLs:

University Staff: Request a correction | Enlighten Editors: Update this record