Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications

Li, X. , Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. 42nd International Conference on Micro and Nano Engineering (MNE 2016), Vienna, Austria, 19-23 Sept 2016. (Unpublished)

Abstract

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• Item Type: Conference or Workshop Item
• Status: Unpublished
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Thayne, Prof Iain and Fu, Mr Yen-Chun and Li, Dr Xu and Cho, Dr Sung-Jin and Hemakumara, Miss Dilini
• Authors: Li, X., Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D., and Thayne, I. G.
• College/School: College of Science and Engineering > School of Engineering; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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