A Dual Barrier InAlN/AlGaN/GaN HEMT on Si Substrate with Pt Based Gates

Floros, K., Li, X. , Guiney, I., Cho, S.-J., Ternent, G., Hemakumara, D., Wasige, E. , Moran, D.A.J. , Humphries, C.J. and Thayne, I.G. (2016) A Dual Barrier InAlN/AlGaN/GaN HEMT on Si Substrate with Pt Based Gates. In: 9th International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016, (Unpublished)

Floros, K., Li, X. , Guiney, I., Cho, S.-J., Ternent, G., Hemakumara, D., Wasige, E. , Moran, D.A.J. , Humphries, C.J. and Thayne, I.G. (2016) A Dual Barrier InAlN/AlGaN/GaN HEMT on Si Substrate with Pt Based Gates. In: 9th International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016, (Unpublished)

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Item Type:Conference Proceedings
Status:Unpublished
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Li, Dr Xu and Cho, Dr Sungjin and Thayne, Professor Iain and Ternent, Dr Gary and Moran, Dr David and Hemakumara, Miss Dilini
Authors: Floros, K., Li, X., Guiney, I., Cho, S.-J., Ternent, G., Hemakumara, D., Wasige, E., Moran, D.A.J., Humphries, C.J., and Thayne, I.G.
College/School:College of Science and Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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