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The Impact of an HBr/Ar Atomic Layer Etch (ALE) Process for InGaAs Vertical Nanowire Diameter Reduction on the Interface Between InGaAs and In-situ ALD Deposited HfO2

Li, X. , Fu, Y.-C., Millar, D.A.J., Peralagu, U. , Steer, M. and Thayne, I.G. (2016) The Impact of an HBr/Ar Atomic Layer Etch (ALE) Process for InGaAs Vertical Nanowire Diameter Reduction on the Interface Between InGaAs and In-situ ALD Deposited HfO2. 47th IEEE Semiconductor Interface Specialists Conference (SISC 2016), San Diego, CA, USA, 8-10 Dec 2016.

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Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Prof Iain and Fu, Mr Yen-Chun and Peralagu, Mr Uthayasankaran and Steer, Dr Matthew and Li, Dr Xu and Millar, Mr David
Authors: Li, X., Fu, Y.-C., Millar, D.A.J., Peralagu, U., Steer, M., and Thayne, I.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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