Low-loss MMICs viable transmission media for GaN-on-low resistivity silicon technology

Eblabla, A., Benakaprasad, B., Li, X. , Wallis, D.J., Guiney, J. and Elgaid, K. (2017) Low-loss MMICs viable transmission media for GaN-on-low resistivity silicon technology. IEEE Microwave and Wireless Components Letters, 27(1), pp. 10-12. (doi: 10.1109/LMWC.2016.2629964)

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Abstract

In this work a novel ultra-low loss transmission media for RF GaN-on-low-resistivity silicon (LR-Si) substrates (σ < 40 Ω.cm) has been successfully demonstrated. The developed shielded-microstrip lines achieve comparable performance to those on semi-insulating (SI) GaAs substrates with transmission loss of 0.9 dB/mm for frequencies up to 67 GHz. Line performance was further enhanced by additional elevation of the shielded-microstrip lines using air-bridge technology above a 5 μm layer of benzocyclobutene (BCB) on shielded metalized ground planes. Transmission loss of 0.6 dB/mm for frequencies up to 67 GHz was obtained as a result of the extra elevation. Structure parameters were designed and optimized based on EM simulation for best performance. The work shows that the RF energy coupled into the substrate was eliminated, indicating the suitability of III-V-on-LR Si technology for millimeter-wave applications.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Benakaprasad, Miss Bhavana and Eblabla, Mr Abdalla and Elgaid, Dr Khaled
Authors: Eblabla, A., Benakaprasad, B., Li, X., Wallis, D.J., Guiney, J., and Elgaid, K.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Microwave and Wireless Components Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN:1531-1309
ISSN (Online):1558-1764
Published Online:23 December 2016
Copyright Holders:Copyright © 2017 IEEE
First Published:First published in IEEE Microwave and Wireless Components Letters 27(1):10-12
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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