Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs

Kivisaari, P., Sadi, T., Oksanen, J. and Tulkki, J. (2016) Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs. Optical and Quantum Electronics, 48(2), 154. (doi: 10.1007/s11082-016-0406-4)

Abstract

Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5kBT1.5kBT corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.

• Item Type: Articles
• Additional Information: We acknowledge the financial support from the Nokia Foundation, the Finnish Cultural Foundation, and the Aalto Energy Efficiency Research Programme.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Sadi, Dr Toufik
• Authors: Kivisaari, P., Sadi, T., Oksanen, J., and Tulkki, J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Optical and Quantum Electronics
• Publisher: Springer
• ISSN: 0306-8919
• ISSN (Online): 1572-817X
• Published Online: 30 January 2016
• Copyright Holders: Copyright © 2016 Springer Science+Business Media
• First Published: First published in Optical and Quantum Electronics 48(2): 154
• Publisher Policy: Reproduced in accordance with the publisher copyright policy