Influence of oxygen partial pressure on the properties of undoped InOx films deposited at room temperature by rf-PERTE

Nunes de Carvalho, C., Lavareda, G., Parreira, P. , Valente, J. , Amaral, A. and Botelho do Rego, A.M. (2008) Influence of oxygen partial pressure on the properties of undoped InOx films deposited at room temperature by rf-PERTE. Journal of Non-Crystalline Solids, 354(15-16), pp. 1643-1647. (doi:10.1016/j.jnoncrysol.2007.10.004)

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Abstract

Transparent and conductive/semiconductive undoped indium oxide (InOx) thin films were deposited at room temperature. The deposition technique used is the radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) of indium (In) in the presence of oxygen. The influence of oxygen partial pressure on the properties of these films is presented. The oxygen partial pressure varied between 3 × 10−2 and 1.3 × 10−1 Pa. Undoped InOx films, 100 nm thick, deposited at the oxygen partial pressure of 6 × 10−2 Pa show a conductive behaviour, exhibit an average visible transmittance of 81%, a band gap around 2.7 eV and an electrical conductivity of about 1100 (Ω cm)−1. For oxygen pressures greater than 6 × 10−2 Pa, semiconductive films are obtained, maintaining the visible transmittance. Films deposited at lower pressures are conductive but dark. From XPS data, films deposited at an oxygen partial pressure of 6 × 10−2 Pa show the highest amount of oxygen in the film surface and the lowest ratio between oxygen in the oxide crystalline and amorphous phases.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Valente, Dr Joao and Parreira, Dr Pedro Miguel
Authors: Nunes de Carvalho, C., Lavareda, G., Parreira, P., Valente, J., Amaral, A., and Botelho do Rego, A.M.
College/School:College of Science and Engineering > School of Physics and Astronomy
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Non-Crystalline Solids
Publisher:Elsevier
ISSN:0022-3093
ISSN (Online):1873-4812
Published Online:28 November 2007

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